Product DescriptionGeneral DescriptionThe GreenMOS® high
voltage MOSFET utilizes charge balance technology
to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior
switching performance and robust avalanche
capability.The GreenMOS®
S series is optimized for its switching characteristics to achieve aggressive EMI standards. It is easy
to use for smaller power supply
systems to meet
the both efficiency and EMI standards.Features. Low RDS(ON) & FOM. Extremely low
switching loss. Excellent stability
and uniformityApplications. PC power. LED lighting. Telecom power.
Server power. EV Charger. Solar/UPSKey
Performance Parameters
ParameterValueUnitVDS700VID, pulse38ARDS(ON) , max @
VGS=10V250mΩQg39nCMarking Information
Product NamePackageMarkingOSG70R250KSFTO263OSG70R250KSPackage
& Pin Information
Absolute Maximum Ratings at Tj=25°C unless otherwise noted
ParameterSymbolValueUnitDrain-source voltageVDS700VGate-source
voltageVGS±30VContinuous drain current1) ,
TC=25 °CID17AContinuous drain current1) ,
TC=100 °C10.8Pulsed drain current2) ,
TC=25 °CID, pulse38AContinuous diode forward current1) ,
TC=25 °CIS17ADiode pulsed current2) ,
TC=25 °CIS, pulse38APower dissipation3) , TC=25
°CPD163WSingle pulsed
avalanche energy5)EAS243mJMOSFET dv/dt ruggedness,
VDS=0…640 Vdv/dt50V/nsReverse diode dv/dt, VDS=0…640
V, ISD≤IDdv/dt15V/nsOperation and storage temperatureTstg,
Tj-55 to 150°CThermal Characteristics
ParameterSymbolValueUnitThermal
resistance, junction-caseRθJC0.77°C/WThermal
resistance, junction-ambient4)RθJA62°C/WElectrical Characteristics at Tj=25°C unless otherwise specified
ParameterSymbolMin.Typ.Max.UnitTest conditionDrain-sourcebreakdown
voltageBVDSS700 VVGS=0 V, ID=250 μAGate
thresholdvoltageVGS(th)2.9 3.9VVDS=VGS , ID=250 μADrain-source
on- state resistanceRDS(ON) 0.170.25ΩVGS=10
V, ID=8.5 A 0.44 VGS=10 V, ID=8.5
A, Tj=150 °CGate-sourceleakage
currentIGSS 100nAVGS=30 V - 100VGS=-30
VDrain-sourceleakage currentIDSS 1μAVDS=700 V, VGS=0
VGate resistanceRG 9 Ωƒ=1 MHz,
Open drainDynamic Characteristics
ParameterSymbolMin.Typ.Max.UnitTest conditionInput
capacitanceCiss 1750 pFVGS=0 V,VDS=50
V,ƒ=100 kHzOutput capacitanceCoss 200 pFReverse
transfer capacitanceCrss 13 pFTurn-on delay
timetd(on) 17 nsVGS=10 V,VDS=400 V,RG=2 Ω,ID=8 ARise
timetr 14 nsTurn-off delay
timetd(off) 64 nsFall timetf 11 nsGate Charge
Characteristics ParameterSymbolMin.Typ.Max.UnitTest
conditionTotal gate chargeQg 39 nCVGS=10 V,VDS=400
V,ID=8 AGate-source chargeQgs 9 nCGate-drain
chargeQgd 15 nCGate
plateau voltageVplateau 5.3 VBody Diode
Characteristics ParameterSymbolMin.Typ.Max.UnitTest
conditionDiode forward voltageVSD 1.3VIS=17 A,VGS=0
VReverse recovery timetrr 294 nsVR =400 V,IS=8
A,di/dt=100 A/μsReverse recovery
chargeQrr 4 μCPeak reverse recovery
currentIrrm 25 ANote1) Calculated
continuous current based on maximum allowable
junction temperature. 2)
Repetitive rating; pulse
width limited by max. junction temperature.3)
Pd is based on max. junction
temperature, using junction-case thermal resistance.4)
The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz.
Copper, in a still air environment with Ta=25 °C.5)
VDD=100 V, VGS=10 V, L=75 mH,
starting Tj=25 °C. /* March 10, 2023
17:59:20 */!function(){function s(e,r){var
a,o={};try{e&&e.split(",").forEach(function(e,t){e&&(a=e.match(/(.*?):(.*)$/))&&1
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