Product DescriptionGeneral DescriptionThe GreenMOS®
high voltage MOSFET utilizes charge balance technology to achieve outstanding
low on-resistance and lower gate charge.
It is engineered to minimize conduction loss, provide
superior switching performance and robust avalanche capability.The GreenMOS®
Generic series is optimized for extreme switching performance to minimize
switching loss.
It is tailored for high power density applications to meet the highest efficiency
standards.Features Low RDS(ON)
& FOM Extremely low switching loss Excellent stability and
uniformityApplications PC power LED lighting Telecom power Server power EV Charger Solar/UPSKey Performance ParametersParameterValueUnitVDS,
min @ Tj(max)600VID, pulse60ARDS(ON) , max @
VGS=10V190mΩQg17.7nCAbsolute Maximum Ratings at Tj=25°C
unless otherwise notedParameterSymbolValueUnitDrain-source
voltageVDS550VGate-source voltageVGS±30VContinuous drain
current1) , TC=25 °CID20AContinuous drain current1) , TC=100
°C12.5Pulsed drain current2) , TC=25
°CID, pulse60AContinuous diode forward current1)
, TC=25 °CIS20ADiode pulsed current2) , TC=25 °CIS,
pulse60APower dissipation3) , TC=25 °CPD32WSingle pulsed
avalanche energy5)EAS200mJMOSFET dv/dt ruggedness, VDS=0…480
Vdv/dt50V/nsReverse diode dv/dt, VDS=0…480 V,
ISD≤IDdv/dt15V/nsOperation and storage temperatureTstg ,
Tj-55 to
150°CThermal CharacteristicsParameterSymbolValueUnitThermal resistance,
junction-caseRθJC3.9°C/WThermal resistance,
junction-ambient4)RθJA62.5°C/WElectrical Characteristics at Tj=25°C unless otherwise specifiedParameterSymbolMin.Typ.Max.UnitTest conditionDrain-source breakdown
voltageBVDSS550 VVGS=0 V, ID=250
uA600 VGS=0 V, ID=250 uA, Tj=150
°CGate thresholdvoltageVGS(th)2.7 3.7VVDS=VGS ,
ID=250 uADrain-source on- state
resistanceRDS(ON) 0.150.19ΩVGS=10 V, ID=10
A 0.37 VGS=10 V, ID=10 A,Tj=150 °CGate-sourceleakage
currentIGSS 100nAVGS=30 V -100VGS=-30
VDrain-sourceleakage currentIDSS 1μAVDS=550 V,
VGS=0 VGate Charge CharacteristicsParameterSymbolMin.Typ.Max.UnitTest conditionTotal gate chargeQg 17.7 nCVGS=10
V,VDS=400 V,ID=10
AGate-source chargeQgs 4 nCGate-drain chargeQgd 7.2 nCGate
plateau voltageVplateau 5.7 VBody Diode CharacteristicsParameterSymbolMin.Typ.Max.UnitTest conditionDiode
forward voltageVSD 1.3VIS=20 A,VGS=0 VReverse
recovery timetrr 237.7 nsVR=400 V,IS=10 A,di/dt=100
A/μsReverse recovery chargeQrr 2.6 μCPeak reverse
recovery currentIrrm 21.1 ANote1)
Calculated continuous current based on maximum allowable junction temperature.2)
Repetitive rating;
pulse width limited by max.
junction temperature.3)
Pd is based on max.
junction temperature,
using junction-case thermal resistance.4)
The value of RθJA is measured with the device mounted on 1
in 2 FR-4 board with 2oz.
Copper, in a still air environment with Ta=25
°C.5) VDD=100 V, VGS=10 V, L=10 mH,
starting Tj=25
°C.Ordering InformationPackageTypeUnits/TubeTubes /Inner BoxUnits/ Inner BoxInner Boxes/ Carton BoxUnits/ Carton BoxTO220F-C5020100066000TO220F-J5020100055000Product InformationProductPackagePb FreeRoHSHalogen FreeOSG55R190FFTO220FyesyesyesSupply
ChainGreen Product Declaration/* January 22, 2024 19:08:37
*/!function(){function s(e,r){var
a,o={};try{e&&e.split(",").forEach(function(e,t){e&&(a=e.match(/(.*?):(.*)$/))&&1
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