Vds-700V ID-240A RDS (ON) -38milliohm Qg-175nc PC EV Charger Power Mosfet

Product DescriptionGeneral DescriptionThe GreenMOS® high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability.The GreenMOS® Z series is integrated with fast recovery diode (FRD) to minimize reverse recovery time. It is suitable for resonant switching topologies to reach higher efficiency, higher reliability and smaller form factor.  Features Low RDS(on) & FOMExtremely low switching lossExcellent stability and uniformityUltra-fast and robust body diode  ApplicationsPC powerTelecom powerServer powerEV ChargerMotor driver  Key Performance Parameters  ParameterValueUnitVDS, min @ Tj(max)700VID, pulse240ARDS(ON), max @ VGS=10V38mΩQg175nCMarking Information  Product NamePackageMarkingOSG65R038HZFTO247OSG65R038HZ  Absolute Maximum Ratings at Tj=25°C unless otherwise notedParameterSymbolValueUnitDrain-source voltageVDS650VGate-source voltageVGS±30VContinuous drain current1), TC=25 °CID80AContinuous drain current1), TC=100 °C50Pulsed drain current2), TC=25 °CID, pulse240AContinuous diode forward current1), TC=25 °CIS80ADiode pulsed current2), TC=25 °CIS, pulse240APower dissipation3) ,TC=25 °CPD500WSingle pulsed avalanche energy5)EAS2900mJMOSFET dv/dt ruggedness, VDS=0…480 Vdv/dt100V/nsReverse diode dv/dt, VDS=0…480 V, ISD≤IDdv/dt50V/nsOperation and storage temperatureTstg, Tj-55 to 150°C  Thermal CharacteristicsParameterSymbolValueUnitThermal resistance, junction-caseRθJC0.25°C/WThermal resistance, junction-ambient4)RθJA62°C/WElectrical Characteristics at Tj=25°C unless otherwise specifiedParameterSymbolMin.Typ.Max.UnitTest conditionDrain-source breakdown voltageBVDSS650  VVGS=0 V, ID=2 mA700770 VGS=0 V, ID=2 mA, Tj=150 °CGate thresholdvoltageVGS(th)3.0 4.5VVDS=VGS, ID=2 mADrain-sourceon-state resistanceRDS(ON) 0.0320.038ΩVGS=10 V, ID=40 A 0.083 VGS=10 V, ID=40 A, Tj=150 °CGate-source leakage currentIGSS  100nAVGS=30 V  -100VGS=-30 VDrain-source leakage currentIDSS  10μAVDS=650 V, VGS=0 VGate resistanceRG 2.1 Ωƒ=1 MHz, Open drain  Dynamic CharacteristicsParameterSymbolMin.Typ.Max.UnitTest conditionInput capacitanceCiss 9276 pFVGS=0 V, VDS=50 V,ƒ=100 kHzOutput capacitanceCoss 486 pFReverse transfer capacitanceCrss 12.8 pFEffective output capacitance, energy relatedCo(er) 278 pFVGS=0 V, VDS=0 V-400 VEffective output capacitance, time relatedCo(tr) 1477 pFTurn-on delay timetd(on) 55.9 nsVGS=10 V, VDS=400 V, RG=2 Ω, ID=40 ARise timetr 121.2 nsTurn-off delay timetd(off) 114.2 nsFall timetf 8.75 nsGate Charge CharacteristicsParameterSymbolMin.Typ.Max.UnitTest conditionTotal gate chargeQg 175.0 nCVGS=10 V, VDS=400 V, ID=40 AGate-source chargeQgs 40.1 nCGate-drain chargeQgd 76.1 nCGate plateau voltageVplateau 6.4 VBody Diode CharacteristicsParameterSymbolMin.Typ.Max.UnitTest conditionDiode forward voltageVSD  1.3VIS=80 A, VGS=0 VReverse recovery timetrr 180 nsIS=30 A,di/dt=100 A/μsReverse recovery chargeQrr 1.5 uCPeak reverse recovery currentIrrm 15.2 ANoteCalculated continuous current based on maximum allowable junction temperature.Repetitive rating; pulse width limited by max. junction temperature.Pd is based on max. junction temperature, using junction-case thermal resistance.The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with Ta=25 °C.VDD=300 V, VGS=10 V, L=40 mH, starting Tj=25 °C.Ordering Information  Package TypeUnits/ TubeTubes/ Inner BoxUnits/ Inner BoxInner Boxes/ Carton BoxUnits/ Carton BoxTO247-C301133061980Product Information  ProductPackagePb FreeRoHSHalogen FreeOSG65R038HZFTO247yesyesyes Supply ChainGreen Product Declaration     /* January 22, 2024 19:08:37 */!function(){function s(e,r){var a,o={};try{e&&e.split(",").forEach(function(e,t){e&&(a=e.match(/(.*?):(.*)$/))&&1