Insulated Gate Bipolar Transistor IGBT G40n120d to-247

PARAMETERSYMBOLRATINGUNIT Collector-Emitter VoltageVCES1200VGate- Emitter VoltageVGES±20VCollector CurrentIC(T=25ºC)80ACollector Current (Tc=100ºC)40APulsed Collector CurrentICM160ADiode Continuous Forward CurrentIF @TC = 100 °C20ADiode Maximum Forward CurrentIFM60ATotal DissipationTC=25ºCPD278WTC=100ºCPD150WJunction TemperatureTj150ºCstorage TemperatureTstg-55~150ºC  FeaturesFS Trench Technology, Positive temperature coefficientLow saturation voltage: VCE(sat), typ = 1.9V@ IC =40A and VGE=15VApplicationsInverter welding machineGeneral frequency converterUPSMotor control  Product Specifications and Packaging ModelsProduct ModelPackage TypeMark NameRoHSPackageQuantityG40N120DTO-247G40N120DPb-freeTube300/box  /* January 22, 2024 19:08:37 */!function(){function s(e,r){var a,o={};try{e&&e.split(",").forEach(function(e,t){e&&(a=e.match(/(.*?):(.*)$/))&&1