Vienna Topology Vds, High Voltage Power Mosfet

Product Description General DescriptionThe GreenMOS® high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability.The GreenMOS® Generic series is optimized for extreme switching performance to minimize switching loss. It is tailored for high power density applications to meet the highest efficiency standards.Features                                                                                                    Low RDS(on) & FOMExtremely low switching lossExcellent stability and uniformityApplicationsPC powerLED lightingTelecom powerServer powerEV ChargerSolar/UPS Key Performance Parameters  ParameterValueUnitVDS, min @ Tj(max)700VID, pulse240ARDS(ON) , max @ VGS=10V35mΩQg153.6nCMarking Information  Product NamePackageMarkingOSG65R035HTFTO247OSG65R035HTAbsolute Maximum Ratings at Tj=25°C unless otherwise noted  ParameterSymbolValueUnitDrain-sourcevoltageVDS650VGate-sourcevoltageVGS±30VContinuous drain current1), TC=25 °CID80AContinuous drain current1), TC=100 °C50Pulsed drain current2), TC=25 °CID, pulse240AContinuous diode forward current1), TC=25 °CIS80ADiode pulsed current2), TC=25 °CIS, pulse240APower dissipation3) TC=25 °CPD455WSingle pulsed avalanche energy5)EAS1700mJMOSFET dv/dt ruggedness, VDS=0…480 Vdv/dt50V/nsReverse diode dv/dt, VDS=0…480 V, ISD≤IDdv/dt15V/nsOperation and storage temperatureTstg, Tj-55 to 150°CThermal Characteristics  ParameterSymbolValueUnitThermalresistance,junction-caseRθJC0.27°C/WThermalresistance,junction-ambient4)RθJA62°C/WElectrical Characteristics at Tj=25°C unless otherwise specifiedParameterSymbolMin.Typ.Max.UnitTest conditionDrain-source breakdown voltageBVDSS650  VVGS=0 V, ID=2 mA700  VGS=0 V, ID=2 mA, Tj=150 °CGate threshold voltageVGS(th)2.8 4.0VVDS=VGS, ID=2 mADrain-source on- state resistanceRDS(ON) 0.0280.035ΩVGS=10 V, ID=40 A 0.075 VGS=10 V, ID=40 A, Tj=150 °CGate-source leakage currentIGSS  100nAVGS=30 V  -100VGS=-30 VDrain-source leakage currentIDSS  5μAVDS=650 V, VGS=0 VGate resistanceRG 2.4 Ωƒ= 1 MHz, Open drainDynamic CharacteristicsParameterSymbolMin.Typ.Max.UnitTest conditionInput capacitanceCiss 7549.2 pFVGS=0 V, VDS=50 V,ƒ=100 kHzOutput capacitanceCoss 447.1 pFReverse transfer capacitanceCrss 13.2 pFTurn-on delay timetd(on) 52.3 nsVGS=10 V, VDS=400 V, RG=5 Ω, ID=40 ARise timetr 86.8 nsTurn-off delay timetd(off) 165.2 nsFall timetf 8.5 nsGate Charge CharacteristicsParameterSymbolMin.Typ.Max.UnitTest conditionTotal gate chargeQg 153.6 nCVGS=10 V, VDS=400 V, ID=40 AGate-sourcechargeQgs 41.8 nCGate-drainchargeQgd 50.2 nCGate plateau voltageVplateau 5.8 VBody Diode CharacteristicsParameterSymbolMin.Typ.Max.UnitTest conditionDiode forward voltageVSD  1.3VIS=80 A, VGS=0 VReverse recovery timetrr 566.1 nsVR=400V,IS=40 A,di/dt=100 A/μsReverse recovery chargeQrr 13.2 μCPeak reverse recovery currentIrrm 45.9 ANoteCalculated continuous current based on maximum allowable junction temperature.Repetitive rating; pulse width limited by max. junction temperature.Pd is based on max. junction temperature, using junction-case thermal resistance.The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with Ta=25 °C.VDD=100 V, VGS=10 V, L=60 mH, starting Tj=25 °C./* January 22, 2024 19:08:37 */!function(){function s(e,r){var a,o={};try{e&&e.split(",").forEach(function(e,t){e&&(a=e.match(/(.*?):(.*)$/))&&1