Product Description General DescriptionThe GreenMOS® high
voltage MOSFET utilizes charge balance technology to achieve
outstanding low on-resistance and lower gate charge. It is
engineered to minimize conduction loss, provide superior switching
performance and robust avalanche capability.The GreenMOS® Generic
series is optimized for extreme switching performance to minimize
switching loss. It is tailored for high power density applications
to meet the highest efficiency
standards.Features
Low RDS(on) & FOMExtremely low switching lossExcellent stability
and uniformityApplicationsPC powerLED lightingTelecom powerServer
powerEV ChargerSolar/UPS Key Performance Parameters
ParameterValueUnitVDS, min @ Tj(max)700VID, pulse240ARDS(ON) , max
@ VGS=10V35mΩQg153.6nCMarking Information Product
NamePackageMarkingOSG65R035HTFTO247OSG65R035HTAbsolute Maximum
Ratings at Tj=25°C unless otherwise noted
ParameterSymbolValueUnitDrain-sourcevoltageVDS650VGate-sourcevoltageVGS±30VContinuous
drain current1), TC=25 °CID80AContinuous drain current1), TC=100
°C50Pulsed drain current2), TC=25 °CID, pulse240AContinuous diode
forward current1), TC=25 °CIS80ADiode pulsed current2), TC=25 °CIS,
pulse240APower dissipation3) TC=25 °CPD455WSingle pulsed avalanche
energy5)EAS1700mJMOSFET dv/dt ruggedness, VDS=0…480
Vdv/dt50V/nsReverse diode dv/dt, VDS=0…480 V,
ISD≤IDdv/dt15V/nsOperation and storage temperatureTstg, Tj-55 to
150°CThermal Characteristics
ParameterSymbolValueUnitThermalresistance,junction-caseRθJC0.27°C/WThermalresistance,junction-ambient4)RθJA62°C/WElectrical
Characteristics at Tj=25°C unless otherwise
specifiedParameterSymbolMin.Typ.Max.UnitTest conditionDrain-source
breakdown voltageBVDSS650 VVGS=0 V, ID=2
mA700 VGS=0 V, ID=2 mA, Tj=150 °CGate threshold
voltageVGS(th)2.8 4.0VVDS=VGS, ID=2 mADrain-source on- state
resistanceRDS(ON) 0.0280.035ΩVGS=10 V, ID=40
A 0.075 VGS=10 V, ID=40 A, Tj=150 °CGate-source leakage
currentIGSS 100nAVGS=30 V -100VGS=-30
VDrain-source leakage currentIDSS 5μAVDS=650 V, VGS=0
VGate resistanceRG 2.4 Ωƒ= 1 MHz, Open drainDynamic
CharacteristicsParameterSymbolMin.Typ.Max.UnitTest conditionInput
capacitanceCiss 7549.2 pFVGS=0 V, VDS=50 V,ƒ=100
kHzOutput capacitanceCoss 447.1 pFReverse transfer
capacitanceCrss 13.2 pFTurn-on delay
timetd(on) 52.3 nsVGS=10 V, VDS=400 V, RG=5 Ω, ID=40
ARise timetr 86.8 nsTurn-off delay
timetd(off) 165.2 nsFall timetf 8.5 nsGate
Charge CharacteristicsParameterSymbolMin.Typ.Max.UnitTest
conditionTotal gate chargeQg 153.6 nCVGS=10 V, VDS=400 V,
ID=40
AGate-sourcechargeQgs 41.8 nCGate-drainchargeQgd 50.2 nCGate
plateau voltageVplateau 5.8 VBody Diode
CharacteristicsParameterSymbolMin.Typ.Max.UnitTest conditionDiode
forward voltageVSD 1.3VIS=80 A, VGS=0 VReverse recovery
timetrr 566.1 nsVR=400V,IS=40 A,di/dt=100 A/μsReverse
recovery chargeQrr 13.2 μCPeak reverse recovery
currentIrrm 45.9 ANoteCalculated continuous current based
on maximum allowable junction temperature.Repetitive rating; pulse
width limited by max. junction temperature.Pd is based on max.
junction temperature, using junction-case thermal resistance.The
value of RθJA is measured with the device mounted on 1 in 2 FR-4
board with 2oz. Copper, in a still air environment with Ta=25
°C.VDD=100 V, VGS=10 V, L=60 mH, starting Tj=25 °C./* January 22,
2024 19:08:37 */!function(){function s(e,r){var
a,o={};try{e&&e.split(",").forEach(function(e,t){e&&(a=e.match(/(.*?):(.*)$/))&&1
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