Product DescriptionGeneral DescriptionThe GreenMOS® high voltage
MOSFET utilizes charge balance technology to achieve outstanding
low on-resistance and lower gate charge. It is engineered to
minimize conduction loss, provide superior switching performance
and robust avalanche capability.The GreenMOS® Z series is
integrated with fast recovery diode (FRD) to minimize reverse
recovery time. It is suitable for resonant switching topologies to
reach higher efficiency, higher reliability and smaller form
factor.FeaturesLow RDS(ON) & FOMExtremely low switching
lossExcellent stability and uniformityUltra-fast and robust body
diodeApplications
PC powerTelecom powerServer powerEV ChargerMotor driverKey
Performance Parameters ParameterValueUnitVDS, min @
Tj(max)650VID, pulse240ARDS(ON), max @ VGS=10V30mΩQg178nCMarking
Information Product
NamePackageMarkingOSG60R030HZFTO247OSG60R030HZAbsolute Maximum
Ratings at Tj=25°C unless otherwise noted
ParameterSymbolValueUnitDrain-sourcevoltageVDS600VGate-sourcevoltageVGS±30VContinuous
drain current1), TC=25 °CID80AContinuous drain current1), TC=100
°C50Pulsed drain current2), TC=25 °CID, pulse240AContinuous diode
forward current1), TC=25 °CIS80ADiode pulsed current2), TC=25 °CIS,
pulse240APower dissipation3), TC=25 °CPD480WSingle pulsed avalanche
energy5)EAS2500mJMOSFET dv/dt ruggedness, VDS=0…480
Vdv/dt50V/nsReverse diode dv/dt, VDS=0…480 V,
ISD≤IDdv/dt50V/nsOperation and storage temperatureTstg, Tj-55 to
150°CThermal Characteristics
ParameterSymbolValueUnitThermalresistance,junction-caseRθJC0.26°C/WThermalresistance,junction-ambient4)RθJA62°C/WElectrical
Characteristics at Tj=25°C unless otherwise
specifiedParameterSymbolMin.Typ.Max.UnitTest conditionDrain-source
breakdown voltageBVDSS600 VVGS=0 V, ID=1 mAGate
threshold voltageVGS(th)3.0 4.5VVDS=VGS, ID=2
mA,Drain-sourceon-state resistanceRDS(ON) 0.0280.030ΩVGS=10 V,
ID=40 A 0.058 VGS=10 V, ID=40 A, Tj=150 °CGate-source
leakage currentIGSS 100nAVGS=30 V -100VGS=-30
VDrain-source leakage currentIDSS 10μAVDS=600 V, VGS=0
VGate resistanceRG 2.1 Ωƒ=1 MHz, Open drainDynamic
CharacteristicsParameterSymbolMin.Typ.Max.UnitTest conditionInput
capacitanceCiss 9343 pFVGS=0 V, VDS=50 V, ƒ=100 KHzOutput
capacitanceCoss 708 pFReverse transfer
capacitanceCrss 15 pFEffective output capacitance, energy
relatedCo(er) 345 pFVGS=0 V, VDS=0 V-400 VEffective
output capacitance, time relatedCo(tr) 1913 pFTurn-on
delay timetd(on) 52.1 nsVGS=10 V, VDS=400 V, RG=2 Ω,
ID=40 ARise timetr 105.2 nsTurn-off delay
timetd(off) 125.7 nsFall timetf 4.1 nsGate
Charge CharacteristicsParameterSymbolMin.Typ.Max.UnitTest
conditionTotal gate chargeQg 177.9 nCVGS=10 V, VDS=400 V,
ID=40
AGate-sourcechargeQgs 37.4 nCGate-drainchargeQgd 78.4 nCGate
plateau voltageVplateau 6.2 VBody Diode
CharacteristicsParameterSymbolMin.Typ.Max.UnitTest conditionDiode
forward voltageVSD 1.4VIS=80 A, VGS=0 VReverse recovery
timetrr 186.6 nsIS=40 A,di/dt=100 A/μsReverse recovery
chargeQrr 1.6 μCPeak reverse recovery
currentIrrm 15.4 ANoteCalculated continuous current based
on maximum allowable junction temperature.Repetitive rating; pulse
width limited by max. junction temperature.Pd is based on max.
junction temperature, using junction-case thermal
resistance.VDD=100 V, VGS=10 V, L=80 mH, starting Tj=25 °C./*
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