Product DescriptionGeneral DescriptionThe GreenMOS® high
voltage MOSFET utilizes charge balance technology
to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior
switching performance and robust avalanche capability.The
GreenMOS® Generic series is
optimized for extreme
switching performance
to minimize switching loss.
It is tailored for high power density applications to meet the highest efficiency
standards.Features. Low RDS(ON) & FOM. Extremely low
switching loss. Excellent stability
and uniformityApplications. PC power. LED lighting. Telecom power.
Server power. EV Charger. Solar/UPSKey
Performance Parameters ParameterValueUnitVDS, min @
Tj(max)850VID, pulse15ARDS(ON) , max @
VGS=10V900mΩQg11.7nCMarking Information
Product NamePackageMarkingOSG80R900DFTO252OSG80R900D Absolute Maximum Ratings at Tj=25°C unless otherwise noted
ParameterSymbolValueUnitDrain-source voltageVDS800VGate-source
voltageVGS±30VContinuous drain current1) ,
TC=25 °CID5AContinuous drain current1) ,
TC=100 °C3.2Pulsed drain current2) ,
TC=25 °CID, pulse15AContinuous diode forward current1) ,
TC=25 °CIS5ADiode pulsed current2) ,
TC=25 °CIS, pulse15APower dissipation3) , TC=25
°CPD63WSingle pulsed
avalanche energy5)EAS160mJMOSFET dv/dt ruggedness,
VDS=0…640 Vdv/dt50V/nsReverse diode dv/dt, VDS=0…640
V, ISD≤IDdv/dt15V/nsOperation and storage temperatureTstg,
Tj-55 to 150°CThermal Characteristics
ParameterSymbolValueUnitThermal
resistance, junction-caseRθJC2°C/WThermal
resistance, junction-ambient4)RθJA62°C/WElectrical Characteristics at Tj=25°C unless otherwise specified
ParameterSymbolMin.Typ.Max.UnitTest conditionDrain-sourcebreakdown
voltageBVDSS800 VVGS=0
V, ID=250 μA850 VGS=0
V, ID=250 μA, Tj=150 °CGate
thresholdvoltageVGS(th)2.9 3.9VVDS=VGS , ID=250 μADrain-source
on- state resistanceRDS(ON) 0.80.9ΩVGS=10
V, ID=2.5 A 2.1 VGS=10 V, ID=2.5
A, Tj=150 °CGate-sourceleakage
currentIGSS 100nAVGS=30 V - 100VGS=-30
VDrain-sourceleakage currentIDSS 1μAVDS=800 V, VGS=0
VDynamic Characteristics ParameterSymbolMin.Typ.Max.UnitTest
conditionInput capacitanceCiss 647.4 pFVGS=0 V,VDS=50
V,ƒ=100 kHzOutput capacitanceCoss 36.1 pFReverse
transfer capacitanceCrss 1.5 pFTurn-on delay
timetd(on) 31.3 nsVGS=10 V,VDS=400 V,RG=2 Ω,ID=4
ARise timetr 16.4 nsTurn-off delay
timetd(off) 54.6 nsFall timetf 7.0 nsGate
Charge Characteristics ParameterSymbolMin.Typ.Max.UnitTest
conditionTotal gate chargeQg 11.7 nCVGS=10 V,VDS=400
V,ID=4 AGate-source chargeQgs 2.8 nCGate-drain
chargeQgd 4.4 nCGate
plateau voltageVplateau 5.8 VBody Diode
Characteristics ParameterSymbolMin.Typ.Max.UnitTest
conditionDiode forward voltageVSD 1.3VIS=5 A,VGS=0
VReverse recovery timetrr 216.5 nsVR =400 V,IS=4
A,di/dt=100 A/μsReverse recovery
chargeQrr 1.9 μCPeak reverse recovery
currentIrrm 17.0 ANote1) Calculated
continuous current based on maximum allowable
junction temperature. 2)
Repetitive rating; pulse
width limited by max. junction temperature.3)
Pd is based on max. junction
temperature, using junction-case thermal resistance.4)
The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with Ta=25 °C.5)
VDD=100 V, VGS=10 V, L=60 mH,
starting Tj=25 °C.Supply ChainGreen Product Declaration
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