Enhancement Mode N-Channel Power IGBT Transistor

  Product DescriptionGeneral DescriptionOST20N135HRF  uses  advanced  Oriental-Semi's patented Trident-Gate Bipolar Transistor (TGBTTM) technology to  provide extremely  low VCE(sat),  low gate charge, and excellent switching performance.This  device  is  suitable  for  resonant  induction heating applications.Absolute Maximum Ratings at Tj =25ºC  unless otherwise noted   ParameterSymbolValueUnitCollector emitter voltageVCES1350VGate emitter voltageVGES±20VTransient Gate emitter voltage, TP ≤10µs, D