DescriptionIRF4905PBF: MOSFET P-CH 55V 74A TO220AB Mfr. Part#:
IRF4905PBFMfr.: INFINEONDatasheet: (e-mail or chat us for PDF
file)ROHS Status: Quality: 100% OriginalWarranty: ONE
YEAR Package Tube Product Status Active FET
Type P-Channel Technology MOSFET (Metal Oxide) Drain
to Source Voltage (Vdss) 55 V Current - Continuous Drain
(Id) @ 25°C 74A (Tc) Drive Voltage (Max Rds On, Min Rds On)
10V Rds On (Max) @ Id, Vgs 20mOhm @ 38A, 10V Vgs(th)
(Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 180 nC @
10 V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @
Vds 3400 pF @ 25 V FET Feature - Power Dissipation
(Max) 200W (Tc) Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole Supplier Device Package
TO-220AB Package / Case TO-220-3 Base Product Number
IRF4905 Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve extremely low
on-resistance per silicon area. This benefit, combined with the
fast switching speed and ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of
applications. The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation levels to
approximately 50 watts. The low thermal resistance and low package
cost of the TO220 contribute to its wide acceptance throughout the
industry. Why choosing usLocated in Shenzhen, the
electronic market center of China.100% guarantee components
quality: Genuine Original.Sufficient stock on your urgent
demand.Sophisticated colleagues help you solve problems to reduce
your risk with on-demand manufacturingFaster shipment: In stock
components can ship the same day .24 Hours
service Notice:Product images are for reference only.You
can contact sales person to apply for a better price. For
more products, Pls do not hesitate to contact our Sales
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