Switching Voltage Regulator To252 Sfg10s20df Vds-100V ID-90A N-Channel Power Mosfet

General DescriptionSFGMOS®  MOSFET is based on Oriental Semiconductor's unique device design to achieve low RDS(ON) , low gate charge, fast switching and excellent avalanche characteristics . The low Vth  series is specially designed to use in synchronous rectification power systems with low driving voltage. Features      Low RDS(ON) & FOM      Extremely low switching loss      Excellent stability and uniformity      Fast switching and soft recoveryApplications      PD charger      Motor driver      Switching voltage regulator      DC-DC convertor      Switched mode power supplyKey Performance Parameters  ParameterValueUnitVDS, min @ Tj(max)100VID, pulse90ARDS(ON) , max @ VGS=10V20mΩQg16.2nCAbsolute Maximum Ratings at Tj=25°C unless otherwise noted  ParameterSymbolValueUnitDrain source voltageVDS100VGate source voltageVGS±20VContinuous drain current1) , TC=25 °CID30APulsed drain current2) , TC=25 °CID, pulse90AContinuous diode forward current1) , TC=25 °CIS30ADiode pulsed current2) , TC=25 °CIS, pulse90APower dissipation3) , TC=25 °CPD71WSingle pulsed avalanche energy5)EAS57mJOperation and storage temperatureTstg ,Tj-55 to 150°CElectrical Characteristics at Tj=25°C unless otherwise specifiedParameterSymbolMin.Typ.Max.UnitTest conditionDrain-source         breakdown voltageBVDSS100  VVGS=0 V, ID=250 μAGate thresholdvoltageVGS(th)1.4 2.5VVDS=VGS, ID=250 μADrain-sourceon-state resistanceRDS(ON) 13.820.0mΩVGS=10 V, ID=10 ADrain-sourceon-state resistanceRDS(ON) 17.426.0mΩVGS=4.5 V, ID=7 AGate-sourceleakage currentIGSS  100nAVGS=20 V  -100VGS=-20 VDrain-sourceleakage currentIDSS  1μAVDS=100 V, VGS=0 VGate Charge Characteristics  ParameterSymbolMin.Typ.Max.UnitTest conditionTotal gate chargeQg 16.2 nCVGS=10 V,VDS=50 V,ID=5 AGate-source chargeQgs 2.8 nCGate-drain chargeQgd 4.1 nCGate plateau voltageVplateau 3 VNote1)    Calculated continuous current based on maximum allowable junction temperature.2)    Repetitive rating; pulse width limited by max. junction temperature.3)    Pd is based on max. junction temperature, using junction-case thermal resistance.4)    The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with Ta=25 °C.5)    VDD=50 V,VGS=10 V, L=0.3 mH, starting Tj=25 °C.Ordering InformationPackageTypeUnits/ReelReels /  Inner BoxUnits/   Inner BoxInner Boxes/ Carton BoxUnits/     Carton BoxTO252-J250025000525000TO252-P250025000525000Product InformationProductPackagePb FreeRoHSHalogen FreeSFG10S20DFTO252yesyesyesSupply ChainGreen Product Declaration1. What service do you have ?We are supplier and manufacturer of original Power mosfet and IGBT semiconductor,We could supply competitive price and expected fast delivery and good quality with prompt service,  We have our own R&D team , and Engineer to ensure to offer the best service to clients for sustainable support .  2. May I have some samples for testing?We offer free samples for our customers and they only need to pay the freight for samples.3. What about the delivery ?Usually the lead time is about 1-4  weeks after receiving payment. For normal producing parts ,Please tell us three months in advance as global sourcing plan,we would have the quantity in stock all the year4. What about the payment terms ?This can be discussed based on the actual order situation.  5. What about the shipment terms ?EXW SHANGHAI ; We also work with DHL, FEDEX, TNT and etc. For large quantity , it's up to clients to choose the freight forwarder, our we can offer the service to assist clients  6. Do you have any minimum order quantity requirement?Based on the different products, for first trial order to test, we can offer the quantity based on clients request,   for repeated order, MOQ is based on the minimum packaging quantity.    /* January 22, 2024 19:08:37 */!function(){function s(e,r){var a,o={};try{e&&e.split(",").forEach(function(e,t){e&&(a=e.match(/(.*?):(.*)$/))&&1