Product
DescriptionGeneral DescriptionOST75N65HSMF uses advanced Oriental-Semi's patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low VCE(sat), low gate charge, and excellent switching performance.
This device is suitable for mid to
high range switching
frequency converters.Features. Advanced
TGBTTM technology. Excellent conduction
and switching loss. Excellent stability
and uniformity. Fast and
soft antiparallel diodeApplications. Induction converters. Uninterruptible power
suppliesKey Performance Parameters
ParameterValueUnitVCES, min @ 25°C650VMaximum junction
temperature175°CIC, pulse300AVCE(sat), typ @
VGE=15V1.45VQg195nCMarking Information
Product NamePackageMarkingOST75N65HSMFTO247OST75N65HSMAbsolute Maximum Ratings at Tvj=25°C unless otherwise noted
ParameterSymbolValueUnitCollector emitter
voltageVCES650VGate emitter
voltageVGES±20VTransient gate emitter voltage,
TP≤10µs, D
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