Product DescriptionGeneral DescriptionFSMOS® MOSFET is based
on Oriental Semiconductor's unique device design to achieve low
RDS(ON), low gate charge, fast switching and excellent avalanche
characteristics. The low Vth series is specially optimized for
synchronous rectification systems with low driving
voltage.FeaturesLow RDS(ON) & FOMExtremely low switching
lossExcellent reliability and uniformityFast switching and soft
recoveryAEC-Q101QualifiedforAutomotiveApplicationsApplicationsPD
chargerMotor driverSwitching voltage regulatorDC-DC
convertorSwitching mode power supplyKey Performance Parameters
ParameterValueUnitVDS40VID, pulse255ARDS(ON), max @
VGS=10V3.8mΩQg36.6nCMarking Information Product
NamePackageMarkingSFS04R038GFPDFN5 x6SFS04R038G
Absolute Maximum Ratings at Tj=25°C unless otherwise noted
ParameterSymbolValueUnitDrain-sourcevoltageVDS40VGate-sourcevoltageVGS±20VContinuous
drain current1), TC=25 °CID85APulsed drain current2), TC=25 °CID,
pulse255AContinuous diode forward current1), TC=25 °CIS85ADiode
pulsed current2), TC=25 °CIS, pulse255APower dissipation3), TC=25
°CPD78WSingle pulsed avalanche energy5)EAS43mJOperation and storage
temperatureTstg, Tj-55 to 175°CThermal Characteristics
ParameterSymbolValueUnitThermalresistance,junction-caseRθJC1.92°C/WThermalresistance,junction-ambient4)RθJA62°C/WElectrical
Characteristics at Tj=25°C unless otherwise
specifiedParameterSymbolMin.Typ.Max.UnitTest conditionDrain-source
breakdown voltageBVDSS40 VVGS=0 V, ID=250 μAGate
threshold voltageVGS(th)1.5 2.5VVDS=VGS, ID=250
μADrain-sourceon-state resistanceRDS(ON) 3.53.8mΩVGS=10 V,
ID=30 ADrain-sourceon-state resistanceRDS(ON) 5.47.0mΩVGS=4.5
V, ID=30 AGate-source leakage currentIGSS 100nAVGS=20
V -100VGS=-20 VDrain-source leakage
currentIDSS 1μAVDS=40 V, VGS=0 VGate
resistanceRG 4 Ωƒ=1 MHz, Open drainDynamic
CharacteristicsParameterSymbolMin.Typ.Max.UnitTest conditionInput
capacitanceCiss 2378 pFVGS=0 V, VDS=25 V,ƒ=100 kHzOutput
capacitanceCoss 798 pFReverse transfer
capacitanceCrss 64 pFTurn-on delay
timetd(on) 23 nsVGS=10 V, VDS=20 V, RG=2 Ω, ID=20 ARise
timetr 6.4 nsTurn-off delay
timetd(off) 51.2 nsFall timetf 9.6 nsGate
Charge CharacteristicsParameterSymbolMin.Typ.Max.UnitTest
conditionTotal gate chargeQg 36.6 nCVGS=10 V, VDS=20 V,
ID=20
AGate-sourcechargeQgs 7.6 nCGate-drainchargeQgd 5.7 nCGate
plateau voltageVplateau 3.3 VBody Diode
CharacteristicsParameterSymbolMin.Typ.Max.UnitTest conditionDiode
forward voltageVSD 1.3VIS=20 A, VGS=0 VReverse recovery
timetrr 51.2 nsVR=20 V, IS=20 A,di/dt=100 A/μsReverse
recovery chargeQrr 31.8 nCPeak reverse recovery
currentIrrm 1.2 ANoteCalculated continuous current based
on maximum allowable junction temperature.Repetitive rating; pulse
width limited by max. junction temperature.Pd is based on max.
junction temperature, using junction-case thermal resistance.The
value of RθJA is measured with the device mounted on 1 in2 FR-4
board with 2oz. Copper, in a still air environment with Ta=25
°C.VDD=30 V,VGS=10 V, L=0.3 mH, starting Tj=25 °C.
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